2SB772L PNP Type Elektronische Bauelemente Epitaxial Transistors RoHS Compliant Product TO-251 A suffix of "-C" specifies halogen & lead-free Description 2.3±0.1 6.6±0.2 5.3±0.2 The 2SB772L os designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and relay driver. 0.5±0.05 7.0±0.2 5.6±0.2 1.2±0.3 0.75±0.15 7.0±0.2 0.6±0.1 0.5±0.1 2.3REF. G D S Dimensions in millimeters o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol Value Units VCBO Collector-Base Voltage -40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -30 V -5 V IC IB PD TJ,Tstg Parameter Collector Current (DC) -3 Collector Current (Pulse) -7 Base Current -0.6 A 10 W Total Power Dissipation Junction and Storage Temperature A -55~+150 C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO I CES Emitter-Base Cutoff Current I EBO Collector Saturation Voltage *VCE(sat) *VBE(sat) *hFE1 *hFE2 Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Min -40 -30 -5 30 100 - fT Cob Typ. -0.3 Max - Unit V V V -1 -1 -0.5 -1 - -2 - uA uA V V - 500 - 80 55 Test Conditions I C=-100µA,IE=0 I C=-1mA,IB=0 I E=-10µA,IC=0 VCB=-30V,IE=0 VEB=- 3V,IC=0 I C=- 2 A,IB=-0.2 A I C=- 2 A,IB=-0.2 A VCE=- 2 V, I C=-20 mA VCE=- 2 V, I C=-20 mA MH z VCE=- 5 V, IC=-0.1mA,, f=100MHz pF VCB=-10 V , f=1MHz,IE=0 *Pulse test: Pulse width≦380 µs, Duty Cycle≦2% Classification of hFE Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Q R S 100~200 160~320 250~500 Any changing of specification will not be informed individual Page 1 of 3 2SB772L Elektronische Bauelemente PNP Type Epitaxial Transistors Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individu Page 2 of 3 2SB772L Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A PNP Type Epitaxial Transistors Any changing of specification will not be informed individu Page 3 of 3