KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z High emitter-base voltage: VEBO=12V(Min) low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS SOT-23 3 Collector 1 Base 2 Emitter A L K 3 Top View 1 2 V J B S C G H D Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 12 V IC 300 mA Pc 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Symbol BVCBO Min. Typ. Max. Unit 25 - - V Test Conditions IC = 100 uA BVCEO 20 - - V IC = 1 mA BVEBO 12 - - V IE = 100 uA ICBO - - 0.1 uA VCB = 25 V IEBO - - 0.1 uA VEB = 12 V hFE1 (FORWARD) 200 - 1000 VCE = 2 V, IC=4 mA hFE1 (REVERSE) 20 - - VCE = 2 V, IC=4 mA VCE(sat) - - 0.25 V IC =100 mA, IB=10 mA VBE(sat) - - 1 V IC =100 mA, IB=10 mA fT - 60 - MHz COB - 10 - pF VCB = 10 V, IE = 0, f = 1 MHz R(ON) - 0.6 - Ω VIN=0.3 V, IB=1mA, f=1KHz 01-June-2005 Rev. A VCE = 10 V, IC = 1 mA, f = 100 MHz Page 1 of 2 KTD1304 Elektronische Bauelemente 0.3 A, 25 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES KTD1304 01-June-2005 Rev. A Page 2 of 2