MPSA05 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Amplifier A D B E C G H Emitter 1 J 2 REF. Base A B C D E 3 Collector Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 F 1 Emitter 2 Base 3 Collector REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 625 mW RθJA 200 °C/W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 60 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage Test Condition V(BR)EBO 4 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=60 V, IE=0 Collector Cut-Off Current ICEO - - 0.1 µA VCE=60V, IB=0 Emitter Cut-Off Current IEBO - - 1 µA VEB=3V, IC=0 hFE (1) 100 - - VCE=1V, IC=100mA hFE (2) 100 - - VCE=1V, IC=10mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base to Emitter Voltage VBE(sat) - - 1.2 V IC=100mA, VCE=1V fT 100 - - MHz VCE=2V, IC=10mA, f=100MHz DC Current Gain Transition Frequency http://www.SeCoSGmbH.com/ 1-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 1