SMF101MH ~ SMF107MH 50 ~ 1000 V 1.0 Amp Surface Mount Silicon Fast Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES SOD-123MH Batch process design, excellent power dissipation offers batter reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Tiny plastic SMD package. High current capability. Fast switching for high efficiency. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirements. Suffix “-H” indicates Halogen-free parts, ex. SMF101MH-H B F D C E E Millimeter MECHANICAL DATA A REF. Epoxy：UL94-V0 rated flame retardant Case：Molded plastic, SOD-123MH Terminals：Plated terminals, solderable per MIL-STD-750, Method 2026 Polarity：Indicated by cathode band Mounting Position：Any Weight：Approximated 0.011 gram A Millimeter REF. Min. Max. 3.30 3.70 D Min. 3.10 (MAX.) Max. B 1.40 1.80 E 0.80 (TYP.) C 0.60 1.00 F 0.30 (TYP.) MARKING Product Marking Code Product Marking Code SMF101MH F1 SMF105MH F5 SMF102MH F2 SMF106MH F6 SMF103MH F3 SMF107MH F7 SMF104MH F4 PACKAGE INFORMATION Package MPQ LeaderSize SOD-123MH 3K 7’ inch http://www.SeCoSGmbH.com/ 03-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 3 SMF101MH ~ SMF107MH 50 ~ 1000 V 1.0 Amp Surface Mount Silicon Fast Recovery Rectifiers Elektronische Bauelemente MAXIMUM RATINGS (TA=25℃ unless otherwise noted) PART NUMBERS PARAMETERS SYMBOL SMF SMF SMF SMF SMF SMF SMF 101MH 102MH 103MH 104MH 105MH 106MH 107MH UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum Continuous reverse voltage VR 50 100 200 400 600 800 1000 V Maximum Instantaneous Forward Voltage VF 1.30 V IO 1.0 A IFSM 25 A Maximum average forward rectified current @ TA=55°C Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum DC Reverse @ T =25°C A Current at Rated DC @TA=100°C Blocking Voltage Diode Junction Capacitance (Note 1) CJ Maximum Reverse Recovery Time Trr Thermal resistance Junction to ambient Operating Temperature Storage Temperature 5.0 IR A 100 15 150 pF 250 500 nS RθJA 42 °C / W TJ -65 ~ 150 °C TSTG -65 ~ 175 °C NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. http://www.SeCoSGmbH.com/ 03-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 SMF101MH ~ SMF107MH Elektronische Bauelemente 50 ~ 1000 V 1.0 Amp Surface Mount Silicon Fast Recovery Rectifiers CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 03-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 3