2N5786 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 45° TO39 PACKAGE (TO-205AD) PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100Ω Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ≥ 1/32” (0.8mm) from seating plane for 10 s max. 45V 45V 40V 3.5V 3.5A 1A 1W 0.0057W/°C 10W 0.057W/°C –65 to +200°C 230°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3079 Issue: 1 2N5786 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter ICER Collector Cut-off Current ICEX Collector Cut-off Current ICEO Test Conditions VCE = 40V Min. Typ. Max. 10 Unit µA RBE = 100Ω TC = 150°C 1 mA VCE = 45V VBE = -1.5V 10 µA RBE = 100Ω TC = 150°C 1 mA Collector Cut-off Current VCE = 25V IB = 0 100 µA IEBO Emitter Cut-off Current VBE = -3.5V IC = 0 10 µA hFE* DC Current Gain VCE = 2V IC = 1.6A 20 VCE = 2V IC = 3.2A 4 IB = 0 40 IC = 0.1A RBE = 100Ω 45 VCE = 2V IC = 1.6A IC = 1.6A IB = 0.16mA 1 IC = 3.2A IB = 0.8mA 2 Small Signal Common – Emitter VCE = -2V IC = 100mA Current Gain f = 200kHz Small Signal Common – Emitter VCE = 2V Current Gain f = 1kHz tON Turn-on Time VCC = 30V tOFF Turn-off Time IB1 = IB2 RθJC Thermal Resistance Junction – Case 17.5 RθJA Thermal Resistance Junction – Ambient 175 VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 0.1A VCER(sus)* Collector – Emitter Sustaining Voltage VBE VCE(sat) hfe hfe 1 Base – Emitter Voltage Collector – Emitter Saturation Voltage 2 IC = 100mA IC = 1A 100 — V 1.5 5 20 V — — 25 5 15 µs °C/W NOTES * 1) 2) 3) Pulse Test: tp = 300µs, δ = 1.8%. These tests MUST NOT be measured on a curve tracer. Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where hfe is decreasing at approximately 6dB per octave. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3079 Issue: 1