2N5885 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 NPN MULTI - EPITAXIAL POWER TRANSISTOR FEATURES • HIGH VOLTAGE • LOW SATURATION VOLTAGES 3 (case) • HIGH RELIABILITY 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS • POWER SWITCHING CIRCUITS TO–3(TO204AA) • LINEAR APPLICATIONS PIN 1 — Base PIN 2 — Emitter Case is Collector . ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 60V VCEO Collector – Emitter Voltage (IB = 0) 60V VEBO Emitter – Base Voltage (IC = 0) 5V IC Collector Current 25A ICM Peak Collector Current 50A IB Base Current 7.5A Ptot Total Power Dissipation at Tcase ≤ 25°C 200W Tstg, Storage Temperature –65 to 200°C Tj Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6366 Issue 1 2N5885 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(BR)* Collector - Emitter Breakdown Voltage VBE* Base – Emitter Voltage ICEV Collector Cut-off Current IEBO Emitter Cut-off Current ICEO ICBO VCE(sat)* VBE(sat)* hFE* Test Conditions IC = 200mA Min. Typ. Max. Unit 60 V IC = 10A VCE = 4V 1.5 VCE = 60V VBE = –1.5V 1.0 TCASE =150°C 10 VEB = 5V IC = 0 1.0 mA Collector Cut-off Current VCE = 30V IB = 0 2 mA Collector Cut-off Current VCE = 60V IE = 0 1.0 mA Collector – Emitter Saturation IC = 15A IB = 1.5A 1.0 Voltage IC = 25A IB = 6.25A 4 IC = 25A IB = 6.25A 2.5 V IC = 3A VCE = 4V 35 IC = 10A VCE = 4V 20 100 — IC = 25A VCE = 4V 4 f = 1 KHz 20 Base – Emitter Saturation Voltage DC Current Gain hfe Small Signal Current Gain IC = 3A VCE = 4V Ccbo Collector Base Capacitance IE = 0 VCB = 10V f = 1 MHz fT Transition Frequency IC = 1.0A VCB = 10V f = 1 MHz tr Rise Time ts Storage Time tf Fall Time VCC = 30V V mA V — 500 4 pF MHz 0.7 IC = 10A 1.0 IB1 = - IB2 = 1.0A µs 0.8 THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case Max 0.875 °C/W * Pulse test tp = 300µs , δ = 1.5 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6366 Issue 1