2N6316 2N6318 MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6316 (NPN) AND 2N6318 (PNP) FEATURES 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) • Low Collector Emitter Saturation Voltage • Low Leakage Current 9.14 (0.360) min. • Excellent DC Current Gain TO–66 (TO-213AA) Pin 1 –Base Pin 2 –Emitter Case – Collector APPLICATIONS: Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) VCEO VCBO VEBO IC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current IB PD Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case TSTG , TJ RθJC Continuous Peak 80V 80V 5V 7A 15A 2A 90W 0.515W/°C –65 to +200°C 1.94°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5354 Issue 1 2N6316 2N6318 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS VCEO(sus) Collector – Emitter Sustaining Voltage * IC = 100mA IB = 0 ICEO Collector Cut–off Current VCE = 40V IB = 0 0.5 ICEX Collector Cut–off Current VCE = 80V VBE(off) = 1.5V 0.25 TC = 150°C 2.0 ICBO Collector Cut–off Current VCB = 80V IE = 0 0.25 IEBO Emitter Cut–off Current VEB = 5V IC = 0 1.0 VCE = 4V IC = 0.5A 35 VCE = 4V IC = 2.5A 20 VCE = 4V IC = 7.0A 4 Collector – Emitter Saturation IC = 4A IB = 0.4A 1.0 Voltage IC = 7A IB = 1.75A 2.0 VBE(sat) Base – Emitter Saturation Voltage IC = 7A IB = 1.75A 2.5 VBE(on) Base – Emitter On Voltage VCE = 4V IC = 2.5A 1.5 VCB = 10V IE = 0 80 V mA ON CHARACTERISTICS * hFE VCE(sat) DC Current Gain 100 — V DYNAMIC CHARACTERISTICS Cob Output Capacitance 300 f = 1MHz pF VCE = 10V fT Current Gain – Bandwidth Product IC = 0.25A 4.0 MHz 20 — f = 1MHz hfe Small Signal Current Gain VCE = 4V IC = 0.5A f = 1kHz DYNAMIC CHARACTERISTICS tr ts Rise Time VCC = 30V 0.7 Storage Time IC = 2.5A 1.0 tf Fall Time IB1 = IB =0.25A 0.8 µS Notes *Pulse test: t = 300µs , Duty Cycle = 2% p Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5354 Issue 1