SEME-LAB D2208UK

TetraFET
D2208UK
SEME
LAB
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 12.5V – 500MHz
PUSH–PULL
A
C
B
(2 pls)
K
3
2
1
E
D
5
4
G (4 pls)
F
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H
J
M
I
N
• SUITABLE FOR BROAD BAND APPLICATIONS
DK
PIN 1
SOURCE (COMMON) PIN 2
DRAIN 1
• VERY LOW Crss
PIN 3
DRAIN 2
GATE 2
• SIMPLE BIAS CIRCUITS
PIN 5
GATE 1
PIN 4
• LOW NOISE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
134W
40V
±20V
16A
–65 to 150°C
200°C
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3041
Issue 1
D2208UK
SEME
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
Drain–Source
VGS = 0
ID = 10mA
VDS = 12.5V
VGS = 0
8
mA
VGS = 20V
VDS = 0
4
µA
VGS(th) Gate Threshold Voltage *
ID = 10mA
VDS = VGS
0.5
7
V
gfs
VDS = 10V
ID = 1.6A
1.44
S
10
dB
40
%
20:1
—
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance *
40
V
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 40W
η
Drain Efficiency
VDS = 12.5V
VSWR Load Mismatch Tolerance
f = 500MHz
IDQ = 1.6A
PER SIDE
Ciss
Input Capacitance
VDS = 0
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance
VDS = 12.5V VGS = 0
* Pulse Test:
VGS = –5V f = 1MHz
96
pF
f = 1MHz
80
pF
f = 1MHz
8
pF
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.3°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3041
Issue 1