SEMIKRON SEMIX151GB12VS

SEMiX151GB12Vs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
231
A
Tc = 80 °C
176
A
150
A
ICnom
ICRM
SEMiX® 1s
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 720 V
VGE ≤ 15 V
VCES ≤ 1200 V
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
189
A
Tc = 80 °C
141
A
150
A
Tj = 125 °C
Inverse diode
SEMiX151GB12Vs
IF
Tj = 175 °C
IFnom
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Remarks
IGBT
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Symbol
VCE(sat)
VCE0
rCE
Conditions
IC = 150 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 600 V
IC = 150 A
VGE = ±15 V
RG on = 1 
RG off = 1 
di/dton = 4600 A/µs
di/dtoff = 1700 A/µs
du/dtoff = 6700 V/
µs
per IGBT
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
min.
600
A
-40 ... 125
°C
4000
V
typ.
max.
Unit
Tj = 25 °C
1.75
2.20
V
Tj = 150 °C
2.20
2.5
V
Tj = 25 °C
0.94
1.04
V
Tj = 150 °C
0.88
0.98
V
Tj = 25 °C
5.4
7.7
m
8.8
10.1
m
6
6.5
V
0.1
0.3
mA
Tj = 150 °C
5.5
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
9.0
nF
f = 1 MHz
0.89
nF
f = 1 MHz
Tj = 150 °C
0.88
nF
1650
nC
5.00

319
ns
Tj = 150 °C
46
ns
Tj = 150 °C
19.4
mJ
Tj = 150 °C
482
ns
Tj = 150 °C
68
ns
Tj = 150 °C
17.1
mJ
0.19
K/W
GB
© by SEMIKRON
Rev. 2 – 16.02.2011
1
SEMiX151GB12Vs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 150 A
VGE = 0 V
chip
VF0
rF
SEMiX® 1s
IRRM
Qrr
Err
Rth(j-c)
SEMiX151GB12Vs
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Tj = 25 °C
Tj = 150 °C
typ.
max.
Unit
2.14
2.46
V
2.07
2.38
V
Tj = 25 °C
1.1
1.3
1.5
V
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
4.3
5.6
6.4
m
7.8
8.5
m
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 4400 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per diode
7.0
175
A
27.5
µC
11.5
mJ
0.31
K/W
Module
LCE
RCC'+EE'
Features
min.
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
16
nH
TC = 25 °C
0.7
m
TC = 125 °C
1
m
0.075
to terminals (M6)
Mt
K/W
3
5
2.5
5
Nm
Nm
Nm
w
145
g
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
Remarks
493 ± 5%

3550
±2%
K
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
GB
2
Rev. 2 – 16.02.2011
© by SEMIKRON
SEMiX151GB12Vs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 16.02.2011
3
SEMiX151GB12Vs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 16.02.2011
© by SEMIKRON
SEMiX151GB12Vs
SEMiX 1s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 16.02.2011
5