MMBT8550W (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 5 V Peak Collector Current -ICM 1.5 A Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA MMBT8550CW MMBT8550DW at -VCE = 1 V, -IC = 800 mA Collector Base Voltage at -IC = 100 µA Collector Emitter Voltage at -IC = 100 µA Emitter Base Voltage at -IE = 100 µA Collector Base Cutoff Current at -VCB = 40 V Collector Emitter Cutoff Current at -VCE = 20 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Transition Frequency at -VCE = 10 V, -IC = 50 mA, f = 30 MHz Symbol Min. Max. Unit hFE hFE hFE 100 160 40 250 400 - - -VCBO 40 - V -VCEO 25 - V -VEBO 5 - V -ICBO - 100 nA -ICEO - 100 nA -IEBO - 100 nA -VCE(sat) - 0.5 V -VBE(sat) - 1.2 V fT 100 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2006 MMBT8550W (1.5A) DC Current Gain -0.5 I B =-4.0mA I B =-3.5mA I B =-3.0mA I B =-2.5mA I B =-2.0mA I B =-1.5mA -0.4 -0.3 -0.2 I B =-1.0mA -0.1 I B =-0.5mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 h FE , DC CURRENT GAIN Ic(mA), COLLECTOR CURRENT Static Characteristic VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 10 1 -1 -10 -100 -1000 Base-Emitter On Voltage I C=10I B -1000 100 I C(mA), COLLECTOR CURRENT -1000 Ic(mA), COLLECTOR CURRENT VBE(sat) , VCE(sat)(mV), SATURATION VOLTAGE -10000 VCE=-1V -0.1 VCE(V), COLLECTOR-EMITTR VOLTAGE Base -Emittr Saturation Voltage Collector-Emitter Saturation Voltage 1000 -100 VCE=-1V -10 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE (V), BASE-EMITTER VOLTAGE I C(mA), COLLECTOR CURRENT f T(MHz), CURRENT GAIN BANDWIDTH PRODUCT Current Gain Bandwidth Product 1000 VCE=-10V 100 10 -1 -10 -100 -1000 I C(mA), COLLECTOR CURRENT SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2006