BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings (Ta = 25 OC) Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 300 mA Total Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE 40 60 300 - -ICBO - 15 nA -IEBO - 15 nA Collector Base Breakdown Voltage at -IC = 10 µA -V(BR)CBO 60 - V Collector Emitter Breakdown Voltage at -IC = 2 mA -V(BR)CEO 50 - V Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA -VCE(sat) - 0.6 V Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA -VBE(sat) - 1.1 V Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA -VBE(on) 0.6 0.72 V fT 200 - MHz CCBO - 10 pF DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 4 V Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007