TGS 1SS181

TIGER ELECTRONIC CO.,LTD
SOT-23 Plastic-Encapsulate Diodes
1SS181
SOT-23
Switching Diodes
FEATURES
y
Low forward voltage
y
Fast reverse recovery time
MARKING: A3
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
VRM
85
V
DC Blocking Voltage
VR
80
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
100
mA
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
-55~+150
TSTG
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Symbol
Min
V (BR)
80
Typ
Max
Unit
Conditions
V
IR=100μA
VF1
0.61
V
IF=1mA
VF2
0.74
V
IF=10mA
VF3
0.92
1.2
V
IF=100mA
IR1
0.1
uA
VR=30V
IR2
0.5
uA
VR=80V
Capacitance between terminals
CT
2.2
4.0
pF
VR=0,f=1MHz
Reverse recovery time
t rr
1.6
4.0
ns
IF=IR=10mA,Irr=0.1×IR
A,May,2011
Typical Characteristics
Forward
100
Characteristics
1SS181
Reverse
1000
30
Ta=100℃
300
(mA)
Characteristics
1
(nA)
REVERSE CURRENT IR
FORWARD CURRENT
3
Ta
=2
5℃
IF
Ta
=1
00
℃
10
0.3
0.1
100
30
Ta=25℃
10
3
0.03
0.01
0.0
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
1
1.2
20
40
REVERSE VOLTAGE
Capacitance Characteristics
1.2
0
(V)
60
VR
80
(V)
Power Derating Curve
200
(mW)
150
PD
1.1
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
f=1MHz
1.0
0.9
0.8
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
A,May,2011