WEITRON 1N4448W

WEITRON
1N4448W
Surface Mount Switching Diode
P b Lead(Pb)-Free
SWITCHING DIODE
250m AMPERES
Features:
* High Conductance
* Fast Switching Speed
* Surface Mount Package Ideally Suited for Automatic Insertion
* For General Purpose Switching Application
100 VOLTS
1
Mechanical Data:
* Case: SOD-323, Molded Plastic
* Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
* Polarity: Cathode Band
* Weight: 0.01grams (approx)
2
SOD-123
SOD-123 Outline Dimensions
Unit:mm
SOD-123
Dim
A
B
C
D
E
H
J
K
Min
Max
2.55
2.85
1.40
1.80
0.95
1.35
0.50
0.70
0.30 REF
0.10
0.15
3.55
3.85
PIN 1. CATHODE
2. ANODE
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1N4448W
Maximum Ratings
WEITRON
(TA=25˚C Unless Otherwise note)
Rating
Symbol
Value
Unit
VRM
100
V
VRRM
VRWM
VR
75
V
VR(RMS)
53
V
Forward Continuous Current
IFM
500
mA
Average Recfified Output Current
IO
250
mA
IFSM
4.0
2.0
A
PD
400
mW
RθJA
315
K/W
TJ
+ 150
°C
Tstg
-65 to +150
°C
Reverse Voltage Nop-Reptitive Peak
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Vlotage
RMS Reverse Voltage
Non-Repetitive Peak Forward Surge Current
@ t=1.0µs
@ t=1.0s
Total Device Dissipation
Thermal Resistance Junction to Ambient Air
Junction and Storage Temperature
Storage Temperature
Electrical Characteristics (TA=25˚C Unless Otherwise note)
Characterictics
Symbol
Min
Max
Unit
VR
-
75
ns
VF
0.62
-
0.72
0.855
1.00
1.25
V
-
2.5
25
µA
nA
Off Characteristics
Reverse Breakdown Voltage
I R=10µA
Forward Voltage
I F=5.0mA
I F=10mA
I F=100mA
I F=150mA
Reverse Voltage Leakage Current
VR=75V
VR=20V
IR
Diode Capacitance
VR=0, f=1.0MHz
CT
-
4.0
pF
Revarse Recover Time
IF=IR=10mA, Irr=0.1 x IR, RL=100Ω
trr
-
4.0
ns
Device Marking
Item
1N4448W
WEITRON
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Marking
Eqivalent Circuitdiagram
T5
1
2/3
2
02-Oct-06
1N4448W
Typical Characteristics
100
400
IF, F RWARD CURRENT (mA)
Pd, POWER DISSIPATION (mW)
500
300
200
100
0
0
50
25
75
100
125
Ta = 50°C
Ta = 85°C
Ta = -30°C
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
200
400
600
1000
800
2.5
trr, REVERSE RECOVERY TIME (nS)
IR, REVERSE CURRENT (µA)
0
VF, FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
10.0
Ta = 100°C
1.0
Ta = 75°C
0.10
Ta = 50°C
Ta = 25°C
Ta = 0°C
0.01
Ta = -30°C
0.001
Ta = 0°C
1
0.1
150
Ta = 25°C
10
2.0
1.5
1.0
0.5
0
0
60
40
20
0
80
2
4
6
8
10
IF, FORWARD CURRENT (mA)
Fig. 4 Reverse Recovery Time vs.
Forward Current
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
4
CT, TOTAL CAPACITANCE (pF)
f = 1MHz
3
2
1
0
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
Fig. 5 Total Capacitance vs.
Reverse Voltage
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