2SC3838 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 P b Lead(Pb)-Free 3 1 1 BASE 2 EMITTER 2 SOT-23 MAXIMUM RATINGS (Ta=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 11 20 Unit V V V mA 3.0 50 THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25°C Symbol PD Thermal Resistance, Junction Ambient Junction and Storage, Temperature Value 150 Unit mW R θJA 625 °C/W TJ, Tstg -55 to +150 °C Device Marking 2SC3838=AD ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage(I C =1mA, IB =0) V(BR)CEO 11 - V Collector-Base Breakdown Voltage(I C =10µA, IE =0) V(BR)CBO 20 - V Emitter-Base Breakdown Voltage(IE =10µA, I C =0) V(BR)EBO 3.0 - V Collector Cufoff Current(VCB =10V, IE =0) ICBO - 0.5 µA Emitter Cufoff Current(VEB =2V, I C=0) IEBO - 0.5 µA Characteristics 1. FR-5=1.0 I I0.75 I I0.062 in WEITRON http://www.weitron.com.tw 1/3 Rev.A 23-Jan-09 2SC3838 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Symbol Characteristics Min TYP Max Unit ON CHARACTERISTICS DC Current Gain VCE=10V ,IC= 5mA hFE 27 - 270 - Transition Frequency VCE=10V ,IC= 10mA, f=500MHz fT 1.4 - - GHz VCE(sat) - - 0.5 V F - - 4.0 dB Collector-Emitter Saturation Voltage IC=-10 mA, IB=5mA Noise Factor VCE=6V, IC=2mA, f=500MHz CLASSIFICATION OF hFE Rank N P Range 56-120 82-180 WEITRON http://www.weitron.com.tw 2/3 Rev.A 25-Sep-08 2SC3838 SOT-23 Package OutlineDimensions Unit:mm Dim A B C D E G H J K L M A B TOP V I EW E G C D H K J WEITRON http://www.weitron.com.tw L Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 M 3/3 23-Apr-07