These components are RoHS compliant SSA-005E&S Miniature IR Array Pb SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for visible and infrared products. • Black housing ideal for LED presentation. • Visible LEDS also available. • Infra red emitters and sensors may be narrow angle lenses or flat wide angle lenses. • Leads are on a double 0.1 inch matrix • Arrays will end stack maintaining 0.1” pitch. MECHANICAL 1.26 7 PITCHES 2.54 N.A.T. 5.0 C L 4.0 4.5 SYMOBLIZING ANODE OR EMITTER SIDE 23 0.5 0.4 POSITION 1 CATHODES OR COLLECTORS THIS SIDE 2.54 8 DIAM. 1.8 20.3 -0.2/+0.00 ORDERING INFORMATION PHOTO TRANSISTOR=SSA005S INFRARED EMITTER=SSA005E PLEASE NOTE CAN BE SUPPLIED IN LESS THAN 8 WAY VERSIONS ON REQUEST WITH COUPLED PAIR SPECIFICATION. BEDFORD OPTO TECHNOLOGY LTD 1 BIGGAR BUSINESS PARK, BIGGAR, LANARKSHIRE,ML12 6FX Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.co.uk E-mail: [email protected] ISS B 23.8.07 SOLDERING TEMPERATURE (3secs max 2mm from body) ALL TYPES 260 OC max SSA-005E&S INFRARED DIODES IR-Emitting Diodes in Miniature (T-3/4) Package PARAMETER SYMBOL VALUE j +12° Peak Wavelength lp 950nm Power Dissipation Pv 170mW RthJA 450K/W IF 100mA Viewing Angle CONDITIONS CQY 37N Thermal Resistance Junction/ Ambient Forward Current Rise Time IF=1.5A, tp/T=0.01, tp<10ms Tr 400ns Fall Time IF=1.5A, tp/T=0.01, tp<10ms Tf 450ns Tj 100°C Tstg -25…+100°C IF=50mA, tp<20ns Ie Min = 2.2mW/ sr Typ = 5mW/sr CONDITIONS SYMBOL VALUE j +40° +12° lp 825nm RthJA 450K/W IF 100mA Junction Temperature Storage Temperature Range Radiant Intensity CQY 37N PHOTO DETECTORS Silicon -NPN - Phototransistors PARAMETER Viewing Angle BPW 17N Peak Wavelength Thermal Resistance Junction/ Ambient Forward Current Rise Time Vs=5V, Ic=5mA, RL=100W Tr 4.8ms Fall Time Vs=5V, Ic=5mA, RL=100W Tf 5.0ms Tj 100°C Tstg -55…+100°C Ica Min = 0.5mA Typ = 1.0mA VCEO 32V ICEO Typ = 1nA Max = 200nA Junction Temperature Storage Temperature Range Collector Light Current BPW 17N Ee=1mW/cm2, l=950nm, Vce=5V Collector Emitter Voltage Collector Dark Current VCE = 20V, E = 0 BEDFORD OPTO TECHNOLOGY LTD 1,BIGGAR BUSINESS PARK, BIGGAR,LANARKSHIRE, ML12 6FX Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009 Website: bot.co.uk E-mail: [email protected] ISS B 23.8.07