CHENMKO ENTERPRISE CO.,LTD CHDTC323TKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 .066 (1.70) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) 1 .002 (0.05) Emitter .055 (1.40) .047 (1.20) (3) .007 (0.177) * One NPN transistors and bias of thin-film resistors in one package. .110 (2.80) .082 (2.10) .119 (3.04) (1) CONSTRUCTION CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA). * High Collector current (IC(Max.)=600mA). * Internal isolated NPN transistors in one package. * Built in single resistor(R1=2.2kΩ, Typ. ) .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. TR R1 3 Collector SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 30 V VCEO Collector-Emitter voltage 15 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 600 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-06 RATING CHARACTERISTIC ( CHDTC323TKPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 30 − − V 15 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=20V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=50mA/2.5mA − 0.08 V hFE DC current gain IC=50mA; VCE=5.0V 100 0.04 250 R1 fT Input resistor Transition frequency 1.64 − 2.2 200 2.86 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IE=-50mA, VCE=10.0V f=100MHz 600 KΩ MHz RATING CHARACTERISTIC CURVES ( CHDTC323TKPT ) Typical Electrical Characteristics Fig.2 Collector-emitter voltage vs. collector current 1k VCE = 5V DC CURRENT GAIN : hFE 500 200 100 Ta=100OC 25OC -40OC 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECsaturationTOR VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1 lO/lI=20 500m 200m Ta=100OC 25OC -40 OC 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (uA)