CHENMKO CHUMF23PT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Power Management (Dual Transistor)
CHUMF23PT
Tr1:VOLTAGE 50 Volts CURRENT 150 mAmpere
DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere
APPLICATION
* Power management circuit
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* Power switching circuit in a single package.
* Mounting cost and area can be cut in half.
* Both the 2SA1774 & CHDTC114E in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
SC-88/SOT-363
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
6
4
R1
Tr1
2.15~2.45
R2
DTr2
1
3
SC-88/SOT-363
Dimensions in millimeters
2SA1774 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
Collector-base voltage
−
-60
V
VCEO
Collector-emitter voltage
−
-50
V
VEBO
Emitter-base voltage
−
-6
V
DC Output current
−
-150
mA
−
150
mW
+150
IC
NOTE.1
PC
Total power dissipation
TSTG
Storage temperature
−55
TJ
Junction temperature
−
Note
1. 120mW per element must not be exceeded.
150
O
C
O
C
CHDTC114E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
−
50
V
VIN
Input voltage
-10
+40
V
−
50
NOTE.1
−
100
NOTE.2
−
150
mW
IO
DC Output current
IC(Max.)
mA
PC
Power dissipation
TSTG
Storage temperature
−55
+150
O
C
TJ
Junction temperature
−
150
O
C
Note
1. Characteristics of built-in transistor.
2. 120mW per element must not be exceeded.
Each terminal mounter on a recommended land.
2SA1774 CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
CONDITIONS
MIN.
BVCEO Collector-emitter breakdown voltage
IC=-50uA
-60
−
−
V
BVCBO Collector-base breakdown voltage
IC=-1mA
-50
−
−
V
IE=-50uA
-6
−
V
VCB=-60V
−
−
−
-100
nA
VEB=-6V
−
−
180
−
-100
390
nA
VCE=-6V,IC=-1mA
−
−
−
-500
mV
5
pF
MHz
BVEBO
PARAMETER
Emitter-base breakdown voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
DC current gain
hFE
VCE(sat)
Cob
fT
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
IC=-50mA,IB=-5mA
VCB=-12V,IE=0mA,f=1MHZ
TYP.
4
−
VCE=-12V,IE=2mA,f=100MHZ
MAX.
140
−
UNIT
−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CHDTC114E CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIoff)
Input off voltage
IO=100uA; VCC=5.0V
0.5
−
−
V
VI(on)
Input on voltage
IO=10mA; VO=0.3V
−
−
3.0
V
V
VO(on)
Output voltage
IO=10mA; II=0.5mA
−
0.1
0.3
II
Input current
VI=5V
−
−
0.88
IC(off)
Output current
VI=0V; VCC=50V
−
−
0.5
G1
DC current gain
IO=5mA; VO=5.0V
30
−
−
−
R1
Input resistor
13
KΩ
R2/R1
fT
Resistor ratio
Transition frequency
1.0
1.2
−
250
−
MHz
Note
Pulse test: tp≤300uS; δ≤0.02.
7
0.8
IE=-5mA, VCE=10.0V
f=100MHz
=
−
10
mA
uA
RATING CHARACTERISTIC CURVES ( CHUMF23PT )
2SA1774 Typical Electrical Characteristics
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−28.0
−24.5
−21.0
−17.5
−14.0
−4
−10.5
−7.0
−2
−3.5µA
−0.4
−0.8
−1.2
500
Ta=100˚C
25˚C
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−40˚C
200
100
50
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
−0.2 −0.5 −1
−2
−80
−60
VCE=−6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Grounded emitter output
characteristics (2)
Ta=25˚C
−500
−450
−400
−350
−300
−250
−200
−150
−40
−100
−20
IB=0
−1.6
−2.0
−50µA
IB=0
−1
0
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.5 DC current gain vs.
collector current
lC/lB=10
−0.5
−100
COLLECTOR TO MITTER VOLTAGE : VCE (V)
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−31.5
−6
Fig.4 Collector-emitter saturation voltage
vs. collector current
−1
Fig.3
−35.0
Ta=25˚C
−8
0
BASE TO EMITTER VOLTAGE : VBE (V)
Grounded emitter output
characteristics (1)
COLLECTOR CURRENT : IC (mA)
−10
−10
VCE=−6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
−20
Fig.2
Grounded emitter propagation
characteristics
Fig. 6 Gain bandwidth product
vs. emitter current
1000
TRANSITION FREQUENCY : fT (MHz)
Fig.1
Ta=25˚C
VCE=−12V
500
200
100
50
0.5
1
2
5
10
20
EMITTER CURRENT : IE (mA)
50
100
RATING CHARACTERISTIC CURVES ( CHUMF23PT )
CHDTC114E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta =- 40OC
O
25
= C
100OC
5
2
1
500m
200m
100m
100
200
500 1m
2m
2m
1m
500
VCC=5V
Ta=100OC
25OC
-40 OC
200
100
50
20
10
5
2
1
5m 10m 20m 50m 100m
0
0.5
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
1k
2.5
3.0
lO/lI=20
500m
Ta=100 C
25OC
-40OC
100
50
20
10
5
2
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
2.0
1
VO =5V
O
1
100 200
1.5
Fig.4 Output voltage vs. output
current
500
200
1.0
INPUT VOLTAGE : VI(off) (V)
Ta=100OC
25OC
-40 OC
200m
100m
50m
20m
10m
5m
2m
500 1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)