polyfet rf devices F1280 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 80 Watts Single Ended Package Style AT TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 190 Watts 0.9 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 12 A Drain to Source Voltage Gate to Source Voltage 50 V 30V 50 V 80WATTS OUTPUT ) MAX 10 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 2.4 A, Vds = 12.5 V, F = 175 MHz % Idq = 2.4 A, Vds = 12.5 V, F = 175 MHz Relative Idq = 2.4 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX Bvdss Drain Breakdown Voltag 40 Idss Zero Bias Drain Curren 6 Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat Saturation Curren Ciss Common Source Input Capacitanc Crss Common Source Feedback Capacitanc Coss Common Source Output Capacitanc UNITS V 1 TEST CONDITIONS Ids = 0.3 A, Vgs = 0V mA Vds = 12.5 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.6 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V 0.15 Ohm Vgs = 20V, Ids = 48 A 45 Amp Vgs = 20V, Vds = 10V 240 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz 36 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz 180 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1280 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1280 POUT VS PIN F=175 MHZ; IDQ=2.4A; VDS=12.5V F1C 6DIE CAPACITANCE 90 17.00 80 16.00 70 15.00 60 14.00 50 13.00 40 12.00 1000 Ciss Coss 100 Crss 30 11.00 Efficiency = 65% 20 10.00 10 9.00 0 8.00 0 2 4 6 8 10 PIN IN WATTS 10 12 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1C 6 DIE IV CURVE F1C 6 DICE ID & GM VS VG 100 60 Id 50 10 40 30 1 20 Gm 10 0 0.1 0 2 4 6 8 10 12 14 16 18 20 0 2 4 Vds in Volts Vg = 2V Vg = 4V Vg = 6V 6 8 10 12 14 16 18 20 Vgs in Volts Vg = 8V S11 AND S22 SMITH CHART Vg = 10V Vg = 12V GM ID PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com