DAYA MMBT5401

SOT-23 Plastic-Encapsulate Transistors
MMBT5401 TRANSISTOR (PNP)
SOT-23
FEATURES
z
Complementary to MMBT5551
Ideal for medium power amplification and switching
z
1. BASE
2. EMITTER
3. COLLECTOR
-
MARKING: 2L
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.6
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA,
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA,
Emitter-base breakdown voltage
V(BR)EBO
IE= -10μA, IC=0
IE=0
IB=0
MIN
MAX
UNIT
-160
V
-150
V
-5
V
Collector cut-off current
ICBO
VCB=-120 V , IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V ,
-0.1
μA
hFE1
VCE= -5V,
IC= -1mA
80
hFE2
VCE= -5V,
IC=-10mA
100
hFE3
VCE= -5V,
IC=-50mA
50
DC current gain
IC=0
300
Collector-emitter saturation voltage
VCE(sat)
IC=-50 mA, IB= -5mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -50 mA, IB= -5mA
-1
V
Transition frequency
fT
VCE= -5V,
f=30MHz
IC= -10mA
100
MHz
Typical Characteristics
MMBT5401