DAYA A44

TO-92 Plastic-Encapsulate Transistors
A44
TRANSISTOR (NPN)
TO-92
FEATURES
y
High voltage
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
1. EMITTER
Value
Units
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
5
V
IC
Emitter-Base Voltage
Collector Current -Continuous
0.2
A
PC
Collector Power Dissipation
0.625
W
Tj
Junction Temperature
150
Storage Temperature
℃
Tstg
-55 to +150
℃
2. BASE
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA , IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=400 V, IE=0
Collector cut-off current
ICEO
VCE=400 V
Emitter cut-off current
IEBO
VEB= 4V, IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition
frequency
0.1
μA
5
μA
0.1
μA
hFE (1)
VCE=10V , IC=10mA
80
300
hFE(2)
VCE=10V, IC=1mA
70
hFE(3)
VCE=10V, IC=100mA
40
hFE(4)
VCE=10V, IC=50mA
80
VCE(sat)
IC=10mA, IB=1mA
0.2
V
VCE(sat)
IC=50mA, IB=5mA
0.3
V
VBE(sat)
IC=10mA, IB= 1mA
0.75
V
fT
VCE=20V, IC=10mA
f =30MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
A
B1
B2
C
80-100
100-150
150-200
200-300