DC COMPONENTS CO., LTD. 2SB857 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current (continuous) IC -4 A Collector Current (peak) IC -8 A Total Power Dissipation(TC=25 C) PD 40 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -70 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-50mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -5 - - V IE=-10µA, IC=0 IC=-10µA, IE=0 ICBO - - -1 µA VCB=-50V, IE=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - -1 V IC=-2A, IB=-0.2A Base-Emitter On Voltage(1) VBE(on) - - -1 V IC=-1A, VCE=-4V hFE1 35 - - - IC=-0.1A, VCE=-4V hFE2 60 - 320 - IC=-1A, VCE=-4V fT - 15 - MHz Collector Cutoff Current DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank B C D Range 60~120 100~200 160~320 IC=-500mA, VCE=-4V, f=100MHz