DC COMPONENTS CO., LTD. DC9014 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in pre-amplifier of low level and low noise. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Total Power Dissipation PD 450 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 50 - - V Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 50 nA VCB=50V, IE=0 Collector Cutoff Current Emitter Cutoff Current Test Conditions IC=100µA, IE=0 IEBO - - 50 nA VEB=5V, IC=0 VCE(sat) - 0.14 0.3 V IC=100mA, IB=5mA VBE(sat) - 0.84 1 V IC=100mA, IB=5mA VBE(on) 0.58 0.63 0.7 V IC=2mA, VCE=5V hFE 60 280 1000 - IC=1mA, VCE=5V Transition Frequency fT 150 270 - MHz Output Capacitance Cob - 2.2 3.5 pF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) (1) Base-Emitter On Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank A B C D Range 60~150 100~300 200~600 400~1000 IC=10mA, VCE=5V VCB=10V, f=1MHz, IE=0