DC COMPONENTS CO., LTD. 2SD882S DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 0.75W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-92 .190(4.83) .170(4.33) Pinning o 1 = Emitter 2 = Collector 3 = Base 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating .022(0.56) .014(0.36) Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V .050 Typ (1.27) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 Collector Current IC 3 A Total Power Dissipation PD 750 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 40 - - V Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA ICBO - - 1 µA VCB=30V Collector Cutoff Current Test Conditions IC=100µA IEBO - - 1 µA VEB=3V Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.5 V IC=2A, IB=0.2A Base-Emitter Saturation Voltage(1) VBE(sat) - - 2 V IC=2A, IB=0.2A hFE1 30 - - - IC=20mA, VCE=2V hFE2 100 - 500 - IC=1A, VCE=2V Emitter Cutoff Current DC Current Gain (1) Transition Frequency fT - 90 - MHz Output Capacitance Cob - 45 - pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 250~500 IC=0.1A, VCE=5V IE=0, VCB=10V, f=1MHz