SILICON PLANAR HIGH SPEED SWITCHING DIODES HD2A HD3A HD4A I 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE VR IF Continuous Reverse Voltage Forward Current UNIT 75 V 100 mA mW Power Dissipation at T amb = 25°C P T O T 330 Operating and Storage Temperature Range tj:tstg –55 to + 1 5 0 o c ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Breakdown Voltage V BR 85 Forward Voltage VF 0.5 Reverse Current IR Total Capacitance CT Reverse Recovery Time t rr Typ. 6 MAX. UNIT V IR = 100µA 0.715 1.0 V v lF = 1 m A lF= 1 0 m A 1.0 60 µA µA V R= 7 5 V o V R =75V, TJ = 1 2 5 C 4 pF V R=O, f=lMHz ns I F = l0mA, I R = 10mA I rr = 1 mA CONDITIONS