ISC 2N5466

Inchange Semiconductor
Product Specification
2N5466 2N5467
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High-voltage capability
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·They are intended for use in off-line power
supplies ,inverter and converter circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5466
VCBO
Collector-base voltage
VALUE
UNIT
500
Open emitter
2N5467
V
700
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
400
V
7
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
IB
Base current
1
A
PD
Total Power Dissipation
140
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.48
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5466 2N5467
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
2.0
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IE=0
1.0
mA
ICEV
Collector cut-off current
VCE=ratedVCEO;VBE(off)=1.5V
TC=125℃
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=4V
15
hFE-2
DC current gain
IC=2A ; VCE=4V
8
Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
fT
CONDITIONS
2
MIN
TYP.
MAX
400
2.5
UNIT
V
45
MHz
Inchange Semiconductor
Product Specification
2N5466 2N5467
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3