Inchange Semiconductor Product Specification 2SA1065 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency ·Complement to type 2SC2489 APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -15 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1065 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A -2.0 V VBE Base-emitter on voltage IC=-10A;VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE-1 DC current gain IC=-2A ; VCE=-5V 40 hFE-2 DC current gain IC=-10A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS hFE-1 Classifications R Q P O 40-80 60-120 90-180 140-280 2 MIN TYP. MAX -150 UNIT V 280 50 MHz Inchange Semiconductor Product Specification 2SA1065 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3