isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 400 V 300 V 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1115 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1115 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH, PW= 50μs; f= 50Hz 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 20mA 2.0 V ICEO Collector Cutoff Current VCE= 300V; RBE= ∞ 100 μA hFE DC Current Gain Switching times ton toff B B n c . i m e s c s i . w w w Turn-on Time IC= 2A; VCE= 2V MAX UNIT 500 1.0 μs 22 μs IC= 2A, IB1= -IB2= 20mA Turn-Off Time isc Website：www.iscsemi.cn TYP. 2