isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Base Current-Peak 10 A Base Current-Continuous 0.5 A Collector Power Dissipation @ TC=25℃ 40 IB B PC TJ Tstg W Collector Power Dissipation @ Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1162 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 5mA 2.0 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 400 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 100 300 UNIT V B B 3000 Switching Times ton Turn-On Time ts Storage Time tf Fall Time IC= 3A; IB1= -IB2= 30mA; RL= 50Ω,VCC≈150V hFE-1 Classifications M L K 400-800 600-1200 1000-3000 isc Website：www.iscsemi.cn 2 1.0 μs 12 μs 6 μs