Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A ・ DESCRIPTION ・With TO-220C package ・High voltage;high speed ・High power dissipation APPLICATIONS ・Switching mode power supply PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 固电 Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS Collector-base voltage 800 Open emitter BUT56A M E S GE BUT56 VCEO N A H INC Collector-emitter voltage Open base BUT56A VEBO Emitter-base voltage Open collector R O T U D N O IC BUT56 VCBO VALUE UNIT V 1000 400 V 450 6 V IC Collector current 8 A ICM Collector current-peak 10 A IBM Base current-peak 4 A Ptot Total power dissipation 100 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.25 K/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUT56 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 400 IC=100mA ;LC=125mH BUT56A V(BR)EBO MIN V 450 Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V BUT56 VCE=800V; VBE=0 Tj=150℃ 1.0 2.0 BUT56A VCE=1000V; VBE=0 Tj=150℃ 1.0 2.0 ICES hFE-1 hFE-2 fT Collector cut-off current 体 导 半 固电 DC current gain 6 mA IC=1A ; VCE=5V BUT56 IC=4A ; VCE=5V BUT56A IC=3A ; VCE=2V 15 Switching times M E S GE N A H INC toff Turn-off time tf Fall time 45 R O T U D N O IC DC current gain Transition frequency V IC=0.5A ;VCE=10V;f=1.0MHz 5.5 4 10 MHz 4 μs 1 μs IC=4A ;IB1=-IB2=1.25A tp=20μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A PACKAGE OUTLINE 体 导 半 固电 R O T U D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3