isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 135 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICEV Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ 0.25 1.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE DC Current Gain IC= 15A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1kHz 400 pF VBE(sat) CONDITIONS MIN TYP. MAX 450 UNIT V B 7 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 10A ;IB1= 1A;IB2= -2A 0.4 μs 1.3 μs 0.15 μs