JMNIC 2N5264

Product Specification
www.jmnic.com
2N5264
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High speed switching
・High reliability
APPLICATIONS
・Switching regulators
・DC-DC convertor
・Solid state relay
・General purpose power amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
180
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
IB
Base current
2
A
PT
Total power dissipation
87
W
Tj
Junction temperature
165
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.0
℃/W
Tc=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
JMnic
Product Specification
www.jmnic.com
2N5264
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=1.4A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.4A
1.2
V
ICBO
Collector cut-off current
VCB=300V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
30
Transition frequency
IC=1A ; VCE=10V
50
fT
JMnic
180
UNIT
V
300
MHz
Product Specification
www.jmnic.com
2N5264
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic