Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5606 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5608/5610 Open emitter 80 2N5612 100 2N5606 80 2N5608/5610 Emitter-base voltage UNIT 60 Open base 2N5612 VEBO VALUE 100 V V 120 Open collector 5 V 5 A 25 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 4.37 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5606 VCEO Collector-emitter sustaining voltage 2N5608/5610 TYP. MAX UNIT 60 IC=50mA ;IB=0 V 80 100 2N5612 VCEsat MIN Collector-emitter saturation voltage IC=1A; IB=0.1A 0.5 V VBE Base-emitter on voltage IC=2.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain 2N5606/5610 2N5608/5612 2N5606/5610 fT 70 200 30 90 IC=2.5A ; VCE=5V Transition frequency 70 IC=0.5A ; VCE=10V 2N5608/5612 MHz 60 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 PACKAGE OUTLINE Fig.2 outline dimensions JMnic