Product Specification www.jmnic.com 2N6261 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・Series and shunt-regulator driver and output stages ・High-fidelity amplifers ・Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 3.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6261 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 0.5 V VBE Base -emitter on voltage IC=1.5A ; VCE=2V 1.5 V ICEV Collector cut-off current VCE=80V;VBE(off)=-1.5V TC=150℃ 0.5 1.0 mA ICEO Collector cut-off current VCE=60V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.2 mA hFE-1 DC current gain IC=4A ; VCE=2V 5 hFE-2 DC current gain IC=1.5A ; VCE=2V 25 JMnic 80 UNIT V 100 Product Specification www.jmnic.com 2N6261 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic