JMnic Product Specification 2SA769 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1827 APPLICATIONS ・For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -4 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA769 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS 2 MIN TYP. 60 MAX UNIT 240 10 MHz JMnic Product Specification 2SA769 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3