JMNIC 2SB1037

JMnic
Product Specification
2SB1037
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High allowable collector dissipation.
・Complement to type 2SD1459
APPLICATIONS
・For color TV vertical output,
sound output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
-1.5
A
-3
A
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
2.0
W
TC=25℃
30
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~175
℃
JMnic
Product Specification
2SB1037
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-0.5A, IB=-50mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-0.5A, IB=-50mA
-1.2
V
ICBO
Collector cut-offcurrent
VCB=-120V;IE=0
-10
μA
IEBO
Emitter cut-offcurrent
VEB=-5V;IC=0
-10
μA
hFE
DC current gain
IC=-0.3A ; VCE=-5V
Transition frequency
IC=-0.1A ; VCE=-5V
fT
‹
CONDITIONS
hFE classifications
Q
R
70-140
100-200
2
MIN
TYP
MAX
-150
UNIT
V
70
200
15
MHz
JMnic
Product Specification
2SB1037
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB1037
Silicon NPN Power Transistors
4