JMNIC 2SC1170

JMnic
Product Specification
2SC1170
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・Designed for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3.5
A
IB
Base current
1.0
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
2.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
JMnic
Product Specification
2SC1170
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.6A
10
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.6A
1.2
V
ICES
Collector cut-off current
VCE=1200V; VBE=0
1.0
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
μA
hFE-1
DC current gain
IC=0.5A ; VCE=10V
10
hFE-2
DC current gain
IC=2A ; VCE=10V
5
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
500
UNIT
V
4
MHz
JMnic
Product Specification
2SC1170
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3