Product Specification www.jmnic.com 2SC5048 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High speed ・High voltage ・Low saturation voltage ・Collector metal (fin) is fully covered with mold resin APPLICATIONS ・Horizontal deflection output for high resolution display,colorTV ・High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-Peak 24 A IB Base current 6 A PC Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC5048 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A IB=2A VBEsat Base-emitter saturation voltage IC=8A IB=2A ICBO Collector cut-off current IEBO MIN TYP. MAX 600 UNIT V 3 V 1.4 V VCB=1500V IE=0 1 mA Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=8A ; VCE=5V 4 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 160 pF Transition frequency IE=0.1A ; VCE=10V 1.7 MHz fT 1.0 Switching times (inductive load) ts Storage time tf Fall time ICP=6A;IB1(end) =1.15A fH=64kHz JMnic 2.5 4 μs 0.15 0.3 μs Product Specification www.jmnic.com 2SC5048 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic