Diodes SMD Type Silicon Epitaxial Planar Diode 1SV232 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 8(Typ.) +0.1 2.6-0.1 1.0max Excellent C-V Characteristics,and Small Tracking Error. 0.475 0.375 +0.05 0.1-0.02 Useful for small size Tuner. Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Symbol Value Unit VR 30 V Peak Reverse Voltage V RM Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range 35(R L = 10 K ) V Electrical C haracteristics T a = 25 P aram eter S ym bol Reverse V oltage VR Reverse Current Capacitance Conditions M in IR = 1 30 A Typ M ax V IR V R = 28 V C 2V f = 1 M Hz;V R = 2 V 28 30.3 32 C 25V f = 1 M Hz;V R = 25 V 2.75 2.9 3.1 10 10.5 Capacitance Ratio C 2V /C 25V S eries Resistance rs V R = 5V , f = 470 M Hz Unit 10 0.55 nA pF 0.7 Note : A vailable in m atched group for capacitance to 2.0% . C(M ax.)-C(M in.) 0.020 C(M in.) (V R =2~25V ) Marking Marking T9 www.kexin.com.cn 1