KEXIN 2SA1252

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1252
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Wide ASO and high durability against breakdown.
1
0.55
High VEBO.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-15
V
Collector current
IC
-150
mA
Collector current (pulse)
ICP
-300
mA
mW
Collector dissipation
PC
200
Jumction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
IcBO
VCB = -40V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -10V , IC = 0
-0.1
ìA
DC current Gain
hFE
VCE = -6V , IC = -1mA
fT
VCE = -6V , IC = -1mA
100
MHz
Cob
VCB = -6V , f = 1MHz
3.5
pF
Gain bandwidth product
Output capacitance
90
VCE(sat) IC = -50mA , IB = -5mA
Collector-emitter saturation voltage
560
-0.5
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-15
V
hFE Classification
Marking
hFE
D4
90
180
D5
135
270
D6
200
400
D7
300
600
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