KEXIN 2SA1607

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1607
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
High gain-bandwidth product.
0.4
3
Fast switching speed.
1
0.55
Low saturation voltage.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Collector current (pulse)
ICP
-300
mA
Base current
IB
-30
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SA1607
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -30V, IE=0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4V, IC=0
-0.1
ìA
DC current gain
hFE
VCE = -1V , IC = -10mA
fT
VCE = -10V , IC = -10mA
400
MHz
Cob
VCB = -10V , f = 1.0MHz
2.9
pF
Gain bandwidth product
Output capacitance
Min
Typ
60
180
Collector-emitter saturation voltage
VCE(sat) IC = -10mA , IB = -1mA
-0.07
-0.2
V
Base-emitter saturation voltage
VBE(sat) IC = -10mA , IB = -1mA
-0.75
-1
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-20
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
Delay time
td
14
20
ns
Rise time
tr
11
20
ns
tstg
80
180
ns
tf
16
25
ns
Storage time
Fall time
hFE Classification
YL
Marking
Rank
hFE
2
Testconditons
3
60
120
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4
90
180