Transistors IC SMD Type Silicon PNP Epitaxia 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Suitable for driver stage of small motor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA mW Collector dissipation PC 200 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -15 V, IE = 0 -100 nA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -100 nA Collector-emitter breakdown voltage V(BR)CEO IC = -10 mA, IB = 0 DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance -15 V hFE VCE = -1 V, IC = -100 mA V] IC = -400 mA, IB = -8 mA VBE VCE = -1 V, IC = -10 mA fT VCE = -5 V, IC = -10 mA 120 MHz VCB = -10 V, IE = 0, f = 1 MHz 13 pF Cob 120 400 -0.5 -0.2 V -0.8 V hFE Classification AE Marking Rank Y hFE 120-240 G 200 400 www.kexin.com.cn 1