KEXIN 2SA1948

Transistors
SMD Type
Silicon PNP Epitaxia
2SA1948
Features
High fT fT=200MHz typ, low Cob Cob=3.5pF typ
Small package for mounting
High voltage VCEO=120V
High collector dissipation Pc=500mW
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Collector dissipation
PC
500
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V (BR) CBO IC = -10 ìA, IE = 0
-120
Collector-emitter breakdown voltage
V (BR) CEO IC = -1 mA,RBE =
-120
V
Emitter-base breakdown voltage
V (BR) EBO IE = -10 ìA, IC = 0
-5
V
Collector cut-off current
ICBO
VCB = -100 V, IE = 0
Emitter cut-off current
IEBO
VEB = -4 V, IC = 0
DC current gain
hFE
VCE = -10 V, IC = -10 mA
Collector-emitter saturation voltage
VCE(sat)
150
-0.1
ìA
-0.1
ìA
800
-0.17
-0.6
V
fT
VCE = -10 V, IE = 10 mA
200
MHz
Cob
VCB=-10V,IE=0,f=1MHz
3.5
pF
Gain band width product
Collector output capacitance
IC = -50 mA, IB = -2.5 mA
V
hFE Classification
Marking
ACE
ACF
ACG
Rank
E
F
G
hFE
150 300
250
500
400
800
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