KEXIN FMMT634

Transistors
SMD Type
Power Darlington Transistor
FMMT634
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Highest current capability SOT23 darlington
0.55
625mW power dissipation
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Very high hFE
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
12
V
IC
900
mA
Collector current
Peak collector current
ICM
5
A
Power dissipation
Ptot
625
mW
Tj,Tstg
-55 to +150
Operating and storage temperature range
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1
Transistors
SMD Type
FMMT634
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100ìA
120
170
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
100
115
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
12
16
V
V
ICBO
VCB=80V
10
nA
Collector Emitter Cut-Off Current
ICES
VCE=80V
100
nA
Emitter cut-off current
IEBO
VEB=7V
10
nA
Collector cutoff current
IC=100mA, IB=1mA
IC=250mA, IB=1mA
VCE(sat) IC=500mA, IB=5mA
IC=900mA, IB=5mA
IC=900mA, IB=5mA
IC=1A, IB=5mA
0.67
0.72
0.75
0.82
0.68
0.85
0.75
0.80
0.85
0.93
Base-emitter saturation voltage *
VBE(sat) IC=1A,IB=5mA
1.5
1.65
V
Base-emitter voltage *
VBE(ON) IC=1A,VCE=5V
1.33
1.5
V
Collector-emitter saturation voltage *
hFE
IC=100mA, VCE=5V
20K
60K
IC=1A, VCE=5V
15K
14K
IC=2A, VCE=5V
5K
IC=5A, VCE=5V
0.96
50K
IC=10mA, VCE=5V
Static Forward Current Transfer Ratio*
V
600
24K
IC=1A, VCE=2V
Current-gain-bandwidth product
Output capacitance
Switching times
* Pulse test: tp = 300 ìs; d
Marking
Marking
2
634
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0.02.
fT
IC=50mA,VCE=10V,f=100MHz
140
MHz
Cobo
VCB=10V,f=1MHz
ton
IC=500mA, VCC=20V
290
ns
toff
IB= 1mA
2.4
ìs
9
20
pF