KEXIN FMMT720

Transistors
SMD Type
Switching Transistor
FMMT723
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
625mW power dissipation
0.4
3
Features
1
IC Up To 10A peak pulse current
0.55
IC CONT 2.5A
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Excellent hfe Characteristics Up To 10A (pulsed)
+0.05
0.1-0.01
+0.1
0.97-0.1
Extremely Low Saturation Voltage E.g. 10mV Typ.
0-0.1
+0.1
0.38-0.1
Exhibits extremely low equivalent on-resistance; RCE(sat)
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-100
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICM
-2.5
A
IB
-500
mA
Ptot
625
mW
Tj,Tstg
-55 to +150
Base current
Power dissipation
Operating and storage temperature range
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1
Transistors
SMD Type
FMMT723
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-100
-200
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-100
-160
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
-8.8
V
V
Collector cutoff current
ICBO
VCB=-80V
Emitter cut-off current
IEBO
VEB=-4V
-100
nA
Collector Emitter Cut-Off Current
ICES
VCES=-80V
-100
nA
mV
-100
nA
Collector-emitter saturation voltage *
IC=-0.1A, IB=-10mA
VCE(sat) IC=-0.5A, IB=-50mA
IC=-1A, IB=-150mA
-50
-125
-210
-80
-200
-330
Base-emitter saturation voltage *
VBE(sat) IC=-1A,IB=-150mA
-0.89
-1.0
V
Base-emitter voltage *
VBE(ON) IC=-1A,VCE=-10V
-0.71
-1.0
V
Static Forward Current Transfer Ratio *
hFE
IC=-10mA, VCE=-10V
300
475
IC=-0.1A, VCE=-10V
300
450
IC=-0.5A, VCE=-10V
250
375
IC=-1A, VCE=-10V
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp = 300 ìs; d
Marking
Marking
fT
Cobo
Switching times
2
Min
723
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0.02.
250
IC=-1.5A, VCE=-10V
30
IC=-50mA,VCE=-10V,f=100MHz
150
200
MHz
VCB=-10V,f=1MHz
13
20
pF
ton
IC=-0.5A, VCC=-50V
50
ns
toff
IB1=IB2=-50mA
760
ns