Transistors SMD Type PNP Silicon Power Switching Transistor FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -8 A Peak pulse current IC -3 A Power dissipation Ptot 1 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX789A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit V(BR)CBO IC=-100ìA -25 Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cut-off current ICBO VCB=-10V Emitter Cut-Off Current IEBO V 0.1 ìA VEB=-4V 0.1 ìA Collector-emitter saturation voltage * IC=-1A, IB=-10mA VCE(sat) IC=-2A, IB=-20mA IC=-3A, IB=-100mA -190 -400 -320 mV Base-emitter saturation voltage * VBE(sat) IC=-1A, IB=-10mA -0.9 V Base-emitter ON voltage * -0.8 VBE(on) IC=-1A, VCE=-2V Static Forward Current Transfer Ratio * Transitional frequency hFE fT IC=-10mA,VCE=-2V IC=-1A,VCE=-2V IC=-2A,VCE=-2V IC=-6A,VCE=-2V 300 230 180 75 IC=-50mA, VCE=-5V, f=50MHz 100 V 800 MHz Input capacitance Cibo VEB=-0.5V, f=1MHz 225 pF Output capacitance Cobo VCB=-10V, f=1MHz 25 pF Turn-on time t(on) IC=-500mA, VCC=-10V 35 ns Turn-off time t(off) IB1=IB2=-50mA 400 ns * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons Collector-base breakdown voltage 789 www.kexin.com.cn 0.02.