KEXIN KI4539ADY

Transistors
IC
SMD Type
N- and P-Channel 30-V (D-S) MOSFET
KI4539ADY
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
10 secs
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
ID
TA = 70
Pulsed Drain Current
P-Channel
Steady State
30
Maximum Power Dissipation*
TA = 25
IS
PD
TA = 70
Operating Junction and Storage Temperature Range
Unit
Steady State
-30
20
V
20
V
5.9
4.4
-4.9
-3.7
A
4.7
3.6
-3.9
-2.9
A
IDM
Continuous Source Current (Diode Conduction)*
10 secs
A
30
1.7
0.9
-1.7
-0.9
A
2
1.1
2
1.1
W
1.3
0.7
1.3
0.7
W
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Absolute Maximum Ratings TA = 25
Parameter
Maximum Junction-to-Ambient *
Symbol
t
10 sec
RthJA
Steady State
Maximum Junction-to-Foot(Drain)
Steady State
RthJF
N-Channel
P-Channel
Typ
Max
Typ
Max
50
62.5
52
62.5
90
110
90
110
40
40
32
40
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
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1
Transistors
IC
SMD Type
KI4539ADY
Electrical Characteristics TJ = 25
Parameter
Symbol
Gate Threshold Voltage
VGS( th)
IGSS
Gate Body Leakage
Zero Gate Voltage Drain Current
IDSS
ID(on)
On State Drain Currenta
Testconditons
VDS = VGS, ID = 250 A
N-Ch
1
VDS = VGS, ID = -250
P-Ch
-1
A
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Gate Resistance
Rg
Turn On Time
td(on)
tr
Rise Time
td( off)
Turn Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
2
rDS(on)
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Typ
Max
N-Ch
100
VDS = 0 V VGS = 20 V
P-Ch
100
VDS = 24V, VGS = 0 V
N-Ch
1
VDS = -24V, VGS = 0 V
P-Ch
-1
VDS = 24 V, VGS = 0 V, TJ = 55
N-Ch
5
VDS = -24V, VGS = 0 V, TJ = 55
P-Ch
-5
VDS
5 V, VGS = 10 V
N-Ch
30
VDS
-5 V, VGS = -10 V
P-Ch
-30
N-Ch
0.032 0.036
0.043 0.053
VGS = -10 V, ID = -4.9A
P-Ch
N-Ch
0.042 0.053
VGS = -4.5 V, ID = -3.7A
P-Ch
0.075 0.090
VDS = 15 V, ID = 5.9A
N-Ch
15
VDS = -15 V, ID = -4.9A
P-Ch
9
IS = 1.7A, VGS = 0 V
N-Ch
0.80
1.2
IS = -1.7A, VGS = 0 V
P-Ch
-0.80
-1.2
N-Channel
N-Ch
13
20
VDS = 15 V, VGS = 10V, ID = 5.9A
P-Ch
15
25
N-Ch
2.3
P-Channel
P-Ch
4
VDS = -15 V, VGS = -10 V, ID = -4.9A
N-Ch
2
P-Ch
2.0
N-Ch
0.5
2.2
P-Ch
5
12.6
N-Ch
6
12
P-Ch
7
15
ID= 1A, VGEN = 10V, Rg = 6
N-Ch
14
25
P-Ch
10
20
P-Channel
N-Ch
30
60
VDD = -15 V, RL = 15
P-Ch
40
80
ID= -1 A, VGEN = -10 V, Rg = 6
N-Ch
5
10
P-Ch
20
40
300 s, duty cycle 2%.
s
V
nC
VDD = 15 V, RL = 15
s
A
S
N Channel
IF = 1.7 A, di/dt = 100 A/
nA
A
VGS = 4.5 V, ID = 4.9A
IF = -1.7 A, di/dt = 100 A/
Unit
V
VDS = 0 V VGS = 20 V
VGS = 10 V, ID = 5.9A
Drain Source On State Resistance*
Min
N-Ch
30
60
P-Ch
30
60
ns