KEXIN KI4501DY

Transistors
IC
SMD Type
Complementary MOSFET Half-Bridge (N- and P-Channel)
KI4501DY
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
-8
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
ID
TA = 70
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)8
Maximum Power Dissipation*
TA = 25
8
V
9
6.2
A
7.4
5.0
A
30
20
A
-1.7
A
PD
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on FR4 Board;t
V
20
1.7
IS
Unit
2.5
W
1.6
W
-55 to 150
TJ, Tstg
10 sec
Thermal Resistance Ratings TA = 25
Parameter
Maximum Junction-to-Ambient*
Symbol
t
10 sec
RthJA
Steady State
Maximum Junction-to-Foot
Steady State
RthJc
N-Channel
P-Channel
Unit
Typ
Max
Typ
Max
38
50
40
50
73
95
73
95
17
22
20
26
/W
*Surface Mounted on FR4 Board.
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Transistors
IC
SMD Type
KI4501DY
Electrical Characteristics TJ = 25
Parameter
Symbol
Gate Threshold Voltage
VGS( th)
Gate Body Leakage
IGSS
Zero Gate Voltage Drain Current
ID(on)
On State Drain Currenta
Drain Source On State Resistance*
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
Rise Time
tr
td( off)
Turn Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
* Pulse test; pulse width
2
IDSS
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Testconditons
Min
VDS = VGS, ID = 250 A
N-Ch
0.8
VDS = VGS, ID = -250
P-Ch
-0.45
A
Typ
Max
V
N-Ch
100
VDS = 0 V VGS = 8 V
P-Ch
100
VDS = 24V, VGS = 0 V
N-Ch
1
VDS = -6.4V, VGS = 0 V
P-Ch
-1
VDS = 24 V, VGS = 0 V, TJ = 55
N-Ch
5
VDS = -6.4V, VGS = 0 V, TJ = 55
P-Ch
-5
VDS =5 V, VGS = 10 V
N-Ch
30
VDS =-5 V, VGS = -4.5 V
P-Ch
-20
VGS = 10 V, ID = 9A
N-Ch
0.015 0.018
0.034 0.042
VDS = 0 V VGS = 20 V
VGS = -4.5 V, ID = -6.2A
P-Ch
N-Ch
0.022 0.027
VGS = -2.5 V, ID = -5.2A
P-Ch
0.048 0.060
VDS = 15 V, ID = 9A
N-Ch
20
VDS = -15 V, ID = -6.2A
P-Ch
14
IS = 1.7A, VGS = 0 V
N-Ch
0.71
1.1
P-Ch
-0.70
-1.1
N-Channel
N-Ch
4.5
20
25
P-Ch
15
N-Ch
3.3
P-Channel
P-Ch
3.0
VDS = -4 V, VGS = -5 V, ID = -6.2A
N-Ch
6.6
P-Ch
2.0
N Channel
N-Ch
13
20
VDD = 15 V, RL = 15
P-Ch
20
40
ID= 1A, VGEN = 10V, Rg = 6
N-Ch
9
18
P-Ch
50
100
N-Ch
35
50
VDD = -4 V, RL = 4
P-Ch
110
220
ID= -1 A, VGEN = -4.5 V, Rg = 6
N-Ch
17
30
P-Ch
60
120
N-Ch
35
70
P-Ch
60
100
300 s, duty cycle 2%.
V
pC
P-Channel
s
A
S
IS = -1.7A, VGS = 0 V
IF = 1.7 A, di/dt = 100 A/
nA
A
VGS = 4.5 V, ID = 7.4A
VDS = 15 V, VGS = 5V, ID = 9A
Unit
ns