KEXIN KI5515DC

IC
IC
SMD Type
Complementary 20-V (D-S) MOSFET
KI5515DC
Features
TrenchFET Power MOSFETS
Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
5 secs
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
ID
TA = 85
Pulsed Drain Current
Maximum Power Dissipation*
TA = 25
IS
PD
TA = 85
Operating Junction and Storage Temperature Range
5 secs
20
Unit
Steady State
-20
V
8
V
5.9
4.4
-4.1
-3
A
4.2
3.1
-2.9
-2.2
A
1.8
0.9
-1.8
-0.9
A
2.1
1.1
2.1
1.1
W
1.1
0.6
1.1
0.6
W
20
IDM
Continuous Source Current (Diode Conduction)*
P-Channel
Steady State
-15
A
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings
Parameter
Symbol
t
Maximum Junction-to-Ambient*
5 sec
RthJA
Steady State
Maximum Junction-to-Case (Drain)
Steady State
RthJF
Typ
Max
50
60
90
110
30
40
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI5515DC
Electrical Characteristics TJ = 25
Parameter
VGS( th)
Gate Threshold Voltage
IGSS
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
tr
Rise Time
td( off)
Turn Off Delay Time
2
IDSS
ID(on)
Drain Source On State Resistance*
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
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Testconditons
Symbol
Min
Typ
Max
VDS = VGS, ID = 250 A
N-Ch
0.4
1.0
VDS = VGS, ID = -250
P-Ch
-0.4
-1.0
A
VDS = 0 V VGS = 8 V
N-Ch
100
VDS = 0 V VGS = 8V
P-Ch
100
VDS = 20V, VGS = 0 V
N-Ch
1
-1
VDS = -20V, VGS = 0 V
P-Ch
VDS = 20 V, VGS = 0 V, TJ = 85
N-Ch
5
VDS = -20V, VGS = 0 V, TJ = 85
P-Ch
-5
VDS
5 V, VGS = 4.5 V
N-Ch
20
VDS
-5 V, VGS = -4.5 V
P-Ch
-15
N-Ch
0.032 0.040
VGS = -4.5 V, ID = -3.0A
P-Ch
0.069 0.086
VGS = 2.5 V, ID = 4.1A
N-Ch
0.036 0.045
0.097 0.121
VGS = -2.5 V, ID = -2.5A
P-Ch
VGS = 1.8 V, ID = 1.9A
N-Ch
0.042 0.052
VGS = -1.8 V, ID = -0.6A
P-Ch
0.137 0.171
VDS = 10 V, ID = 4.4A
N-Ch
22
VDS = -10 V, ID = -3A
P-Ch
8
IS = 0.9A, VGS = 0 V
N-Ch
0.8
1.2
P-Ch
-0.8
-1.2
N-Channel
N-Ch
5
7.5
VDS = 10V, VGS = 4.5V, ID = 4.4A
P-Ch
5.5
8.5
N-Ch
0.85
P-Channel
P-Ch
0.91
VDS = -10 V, VGS = -4.5 V, ID = -3A
N-Ch
1
P-Ch
1.6
N-Ch
20
30
VDD = 10 V, RL = 10
P-Ch
18
30
ID= 1A, VGEN = 4.5V, Rg = 6
N-Ch
36
55
P-Ch
32
50
N-Ch
30
45
VDD = -10 V, RL = 10
P-Ch
42
65
ID= -1 A, VGEN = -4.5 V, Rg = 6
N-Ch
12
20
P-Ch
26
40
IF = -0.9 A, di/dt = 100 A/
300 s, duty cycle 2%.
s
A
V
nC
P-Channel
s
nA
S
IS = -0.9A, VGS = 0 V
IF =0.9 A, di/dt = 100 A/
V
A
VGS = 4.5 V, ID = 4.4A
N Channel
Unit
N-Ch
45
90
P-Ch
30
60
ns