Light Emitting Diode(InGaN) KLB-16B DIMENSIONS KLB-16B is a high bright InGaN blue LED, and has the optimized optical characteristics. Features • Ultra Wide Viewing Angle • Very Thin Small SMD Package Applications • Display • Indicator • Key Pad Back Light [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V IF 20 mA IFP 70 mA PD 70 mW Topr. -20 ~ +85 °C Tstg. -30 ~ +100 °C Tsol. 260 °C Forward current Pulse forward current *1 Power dissipation Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Electro-Optical Characteristics Parameter [ Ta=25°C ] Symbol Conditions IF = 5 mA Min - Typ 2.9 Max 3.4 IF = 10 mA - 3.0 3.6 IF = 5 mA 20 35 - IF = 10 mA 35 60 - Unit Forward voltage VF Luminous Intensity Iv Doninant Wave Length λd IF = 10 mA 465 - 478 nm Spectral half bandwidth ∆λ IF = 10 mA - 25 - nm Half angle ∆Θ IF = 10 mA - 160 - deg. 1/2 V mcd Light Emitting Diode(InGaN) KLB-16B Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 20 Relative intensity Forward current IF(mA) (IF) 25 15 10 5 0 0 20 40 60 80 1 0.5 (℃) 100 0 3 0 10 5 Ambient temperature Ta 15 20 25 (IF) 30 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 0.05 10 Intensity [arb.] Relative radiant intensity PO 0.06 1 0.1 0.04 0.03 0.02 0.01 -20 0 20 40 60 80 0 350 100 (℃) 400 Forward current vs. Forward voltage 500 550 600 Radiant Pattern Angle(deg) ㎃) Y 30 25 20 15 0 +6 0 +4 +20 X -20 -4 0 50 X + 80 -80 -100 5 0 0 +1 0 0 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 Forward voltage VF 50 50 100 Relative intensity(%) 2/2 Y 0 10 0 -6 Forward current IF 450 Wave Length[nm] Ambient temperature Ta