LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX DIGIT LED DISPLAY (2.3Inch) LMD8821/2BEGR-XX DATA SHEET DOC. NO : QW0905- LMD8821/2BEGR-XX REV. : A DATE : 08 - Feb. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD8821/2BEGR-XX Page 1/9 Package Dimensions 9.0 (0.35") 60.2(2.37") 7.54X7=52.78(2.08") 7.54X7 =52.78 (2.08") 60.2 (2.37") 45.75 (1.8") LMD8821/2BEGR-XX LIGITEK ψ0.5 TYP 2.54*11=27.94(1.1") 5.5±0.5 PIN 1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD8821/2BEGR-XX Page 2/9 Internal Circuit Diagram LMD8821BEGR-XX 5 1 2 3 4 6 23 24 20 21 17 18 14 15 2 1 5 4 COLUMN ROW PIN 7 8 7 11 10 8 1 22 2 19 3 16 4 13 5 3 6 6 7 9 8 12 LMD8822BEGR-XX COLUMN ROW PIN 3 5 1 2 4 23 24 20 21 17 18 14 15 2 1 6 5 7 4 8 8 7 11 10 1 22 2 19 3 16 4 13 5 3 6 6 7 9 8 12 RED GREEN LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/9 PART NO. LMD8821/2BEGR-XX Electrical Connection PIN NO. LMD8821BEGR-XX PIN NO. LMD8821BEGR-XX 1 Cathode Column 5 (Green) 13 Anode Row 2 Cathode Column 5 (Red) 14 Cathode Column 4 (Red) 3 Anode Row 5 15 Cathode Column 4 (Green) 4 Cathode Column 6 (Green) 16 Anode Row 5 Cathode Column 6 (Red ) 17 Cathode Column 3 (Red) 6 Anode Row 6 18 Cathode Column 3 (Green) 7 Cathode Column 7 (Green) 19 Anode Row 8 Cathode Column 7 (Red) 20 Cathode Column 2 (Red) 9 Anode Row 7 21 Cathode Column 2 (Green) 10 Cathode Column 8 (Green) 22 Anode Row 1 11 Cathode Column 8 (Red) 23 Cathode Column 1 (Red) 12 Anode Row 8 24 Cathode Column 1 (Green) 4 3 2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD8821/2BEGR-XX Page 4/9 Electrical Connection PIN NO. LMD8822BEGR-XX PIN NO. LMD8822BEGR-XX 1 Anode Column 5 (Green) 13 Cathode Row 4 2 Anode Column 5 (Red) 14 Anode Column 4 (Red) 3 Cathode Row 5 15 Anode Column 4 (Green) 4 Anode Column 6 (Green) 16 Cathode Row 3 5 Anode Column 6 (Red ) 17 Anode Column 3 (Red) 6 Cathode Row 6 18 Anode Column 3 (Green) 7 Anode Column 7 (Green) 19 Cathode Row 2 8 Anode Column 7 (Red) 20 Anode Column 2 (Red) 9 Cathode Row 7 21 Anode Column 2 (Green) 10 Anode Column 8 (Green) 22 Cathode Row 1 11 Anode Column 8 (Red) 23 Anode Column 1 (Red) 12 Cathode Row 8 24 Anode Column 1 (Green) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD8821/2BEGR-XX Page 5/9 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT E G Forward Current Per Chip IF 30 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 120 mA Power Dissipation Per Chip PD 100 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO GaAsP/GaP Orange LMD8821BEGR-XX GaP Green GaAsP/GaP Orange LMD8822BEGR-XX GaP Green Common Cathode Common Anode Electrical λP (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 640 45 1.7 2.1 2.6 4.0 6.1 565 30 1.7 2.1 2.6 5.0 7.2 640 45 1.7 2.1 2.6 4.0 6.1 565 30 1.7 2.1 2.6 5.0 7.2 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/9 PART NO. LMD8821/2BEGR-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD8821/2BEGR-XX Page 7/9 Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) 550 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD8821/2BEGR-XX Page 8/9 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/9 PART NO. LMD8821/2BEGR-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11